1/56??QQ：406433680AMOLED2/56??ⅡIntroductiontoAMOLEDⅢBasicTechnologiesⅣFutureAMOLEDsⅠIntroductionofSamsungMobileDisplayⅢMarketTrends3/56??SMD(SDI–SECJointVenture)MobileDisplayDiv.MobileDisplayDiv.50%50%?SamsungElec.&SamsungSDItosetupaJointVenture123TotalMobileDisplaySolutionProviderNo.1MobileTFT-LCDCompanyLeaderinAMOLEDMarketSTNTFTOLED4/56??SMDCompetitiveness?SECFAB+SDIModule?BestQuality?Operation&ProcessDedicatedtoMobileBiz?CostCompetitiveness?One-StopShopping(OLED+TFT+TSP+STN)TotalSolutionProviderforMobileDisplaysBestCollaborationStructureWorld'sLargestCapacity(444M/Y)5/56??FPDMarketVolume2010[Source:iSuppli2Q.'07]Desktop20%TV47%Mobile32%Others1%※DisplayPanelMarketVolume,Others:Industrial,PublicDisplay,etc..2006Desktop24%TV43%OthersMobile32%1%6/56??LowCostTrendMobileDevicePrice(Ref.2.0”QVGATFTLCD,SDIMarketing'07Q2)'05'03'07$5$10$15$2016106?Module

Price/Inch※SDIPDPMarketing('06.3Q)TVSetPrice'07'065139'0831'0925'1050”HD$10372924201759322650”FHD$20$40$30$50$604442”HDSet

Price/Inch'097/56??IntroductiontoAMOLEDⅠ8/56??EvolutionofDisplayCRT?Bulky?Vacuum?InorganicLCD?Flat?Liquid/Gas?InorganicPDPOLED1stGeneration2ndGeneration3rdGeneration?RigidSheet?Solid?Organic?Flexible?Solid?OrganicFlexible4thGeneration9/56??GlassGlassOLEDAMOLED(ActiveMatrixOrganicLightEmittingDiodes)WhatisAMOLED?TFTAMOLED=+?SiliconbaseTFT(Single,a-Si,PolySi)?OxideTFT?OrganicTFT?SmallMolecule/Polymer?Phosphorescence/FluorescenceClassification10/56??UnchangeableTrueColorComparisonofPictureQualityColorPurityLowGraysContrastColorGamutByBrightnessOutdoorReadabilityAMOLEDAMLCDNTSC100%NTSC10%NTSC80%ViewingAngle11/56??Paper-likeThicknessBestChoiceforCurrentMarketTrend,SlimDesign11.5mm11.9mm6.9mm7.9mm13.9mmPolGlassPolGlassBacklightUnit1.07t2.6t1.47t0.52tThicknessofAMOLED0.37t12/56??AMOLEDTFT(LTPS)Ferrari-likeSpeedFast&RobustResponsetime0.001ms(1us)10msX10,000-10℃70℃25℃(70ms~)(10ms)Winter(onskyslop)Room(~10ms)(0.01ms)(0.01ms)(0.01ms)Summer(Inacar)AMOLEDTFTLCD13/56??(NokiaFINETECH'07,2.0”QVGADisplaywithSamePerceivedLuminance)01002003004005002007200820092010LCD+BLOLEDNormUIOLEDDarkUImWhLowPowerConsumptionPowerconsumptioncomparisonEnergyConsumption??TypicalWebImageTypicalUIImageTypicalStillImageTypicalMoviePageTFTLCDAMOLED226mW360mWTFTLCDAMOLED226mW164mWTFTLCDAMOLED226mW164mWTFTLCDAMOLED226mW31mW14/56??LowCostStructurebasicallylowmaterialcostCostComparison(2.0”)?Increase(Encapglass)?Increase(ComplexProcess)?Remove?Reduce(ICintegration)?Remove?Reduce(1sheet)?Increase(OLEDmaterial)GlassC/FPol.BLUD/ICEtcTotalMaterialCost:85.5%7.6%30.3%3.2%13.6%18%12.8%14.5%ProductionCostAMOLEDRef:SDI('06.1)AMLCDGlass+EncapPol.BLUD/ICEtcC/F??ScalableProcess(>Gen.5)?SimpleProcessStepCostStrategy15/56??AMOLEDDevelopmentHistory16/56??BasicTechnologiesⅡ17/56??AMOLEDProcessGlassloadingTFTprocessTFTProcessOLEDProcessOLEDdepositionCathodedepo.EncapsulationProcessdesiccantSeal&EncapsulationModuleProcessDriverICAttachmentFPCEvaluationProcess18/56??TFTProcess19/56??a-Si:HPolySiSingleSiCrystallizationTFTCarrierMobility0.5-1cm2/V-sec50-200cm2/V-sec>600cm2/V-secDesignRule4-5um1-3um<0.1um-0.25umVth2-4V1-2V<1VPixeltypeNMOSNMOS(LCD)PMOS(OLED)NMOS(LCD)PMOS(OLED)Circuittype-CMOSCMOSApplication-LCD-OLED(?)-SolarCell(Diode)-Photosensor(Diode)-LCD-OLED-SolarCell(Diode)-Systemonpanel-LCOS(LiquidcrystalonSiliconchip)-OLEDonSi(HMD)SiliconMaterialGrain20/56??TFTIssue-a-SiTFTMerits&Demerits?GoodSalability(Gen.8)?Lowcostprocess(4-5maskstep)?GooduniformityofTFTcharacteristics?LowreliabilityofTransistor?Sensitivetolight&temperature?NeedoutsidedriverICSource:SEC40”AMOLED?Reliabilityofa-SiTFTImageBurningImageImageNitNotIsubnPhotonIG-Hotcarrier-DanglingBondgenerationSource:AUOOLED2004LTPSTFTa-SiTFT?Newa-Si&gateoxide?Newstructure&CircuitCancontrollessthan2%variationofVth??a-SiTFTAMOLEDW/S21/56???GoodStabilityofTFT?CircuitIntegration?PossibilityofPMOSTFT?LowUniformityofTransistor?HighinvestmentandProcesscost?Lowscalability(Gen.4)TFTIssue-ELALTPSTFTMerits&Demerits?Beamlengthlimitation?Sizelimitation(Max.~32”)?ELAMura?RoughnessofPolySiELA:EximerLaserAnnealing?CompensationCircuit?ELAProcessOptimizationHighcostandnotscalableprocess!!!Source:SDI31”AMOLED?ELA-LTPSTFTAMOLEDW/SSource:LPL20.1”AMOLED22/56???ProcessIssuesELACrystallizationIssues-LowVBD?lowdevicereliabilitypoly-Sia-Si?Vc>Va?GBprotrusion-PanelSizelimitaion?Max.:32”Max.?Laserlengthlimitation(465mm)-Shortrangenon-uniformityE/D1st2nd3rd285911'Distance?ResultProblems-Lowtrough-put-Highmaintenancecost-Lowstabilityoflaser-Highinvestmentcost-Highprocesscost-NarrowprocesswindowLTPSTFTKeyProcess-ELA23/56??a-SiTFTpoly-SiTFTOxideTFTGeneration8G4G8GSemiconductorAmorphousSiPolycrystallineSiAmorphousIGZOTFTuniformityGoodPoorGoodChannelMobility1cm2/Vs~100cm2/Vs10~90cm2/VsTFTforOLED4~55~114~5PixelCircuitSimple(1T+1C)Complex(5T+2C)Simple(2T+1C)Cost/YieldLow/highHigh/lowLow/high?Vth(@IDS=3uA,30khr)>30V<0.5V~1.7VCircuitIntegrationNOYESYESPixelTFTNMOSPMOS(CMOS)NMOSTFTcharacteristicscomparisonGateSiOxGlasssubstrateGIIGZO(50nm)S/DESVDSVGS(SamsungSDI,SID2008)OxideTFT?12.1”WXGAOxideTFTAMOLED24/56??OLEDProcess25/56??1965Anthracenecrystals(W.HelfrichandW.G.Schneider,Phys.Rev.Lett.14,229(1965)-highvoltages,reactiveelectrodes,verylowefficiency,etc.1970'sThinfilmdevices,LBetc.;Poorstability,lowefficiency,etc.1978DiscoveryofConductingPolymers(dopedpolyacetylene)1982CWTang,Kodak(USP4,356,429),Improvedefficiency(>1lm/W)andstability1987Doped,heterostructurethin-filmOELD(C.W.TangandS.A.VanSlyke,Appl.Phys.Lett.51,913(1987))1990PPVLED(Friendetal,Cambridge,Nature347,539(1990);USP5,247,190)1992Flexible“plastic”LED(Heegeretal,UCSB,Nature357,477(1992))1997Firstcommercialproduct(CarStereo,Pioneer).1998Ink-jetprintingofpolymerOELD(YangYang,UCLA,MRS98;CDT-Seiko-Epson).2000Pentacene,tetracenesinglecrystals(B.Batlogg,BellLabs)-FET~Mobilityofa-Si:H~1cm2/Vs2000NobelPrizeinChemistry,(AlanJ.Heeger,AlanG.MacDiarmid,HidekiShirakawa)Organicdevices:ABriefHistory26/56??ElectronTransportLayer(ETL)EmissionLayer(EML)HoleTransportLayer(HTL)Anode(ITO)Cathode(lowWorkfunction,Ca,Al:Li,Mg:Ag)-electronHole+-+100~200nmExciton1)CarrierInjection(balancedinjection;Ne=Nh)2)CarrierTransport(bipolartransport;me=mh)3)Electron-holerecombinationandexcitonformation4)Radiativeandnon-radiativerecombinationofexcitonsandenergytransferLightoutputOLEDStructure27/56??EvolutionofOLED19601970198019902000CathodeEMLAnodeSubstrateSingleLayerCathodeETLEMLHTLAnodeHILSubstrateMultiLayerS/MFluorescentCathodeETLHBLEMLHTLHILAnodeSubstrateCathodeEMLHTLAnodeSubstrateDoubleLayerPolymerMultiLayerS/MPhosphorescent28/56??OLEDDeviceDesigntransparentelectrodelowsurfaceroughnesshighworkfunctionlowworkfunctionmetals?Holetransport(highholemobility)?Electronblocking?intermediateworkfunctionbtwanodeandHTL?Enhanceinjectionefficiencyofholesfromanode?Goodcontactwithanode?SmootheningeffectonITO?Metal-organiccomplex?Electrontransport?Holeblocking?Host-dopantsystem?Energytransferfromhosttodopant?LightemittinganodecathodeEMLHILEILETLHBLHTLEMLHTLHBLETLHIL?SimulationRoleofeachlayers29/56??ComparisonofLEDsInorganicSemiconductorLEDsOrganicSemiconductorLEDsGlassITOHILHTLETLCathodeEMLRecombination?EmissionofLight－+?Injection:BarrierHeight?Transport:Mobility,Traps,SpaceCharge?Recombination:Exciton?Recombination30/56??Fluorescencevs.Phosphorescence25%75%31/56??MaterialProgressEfficiency?Efficiencyincrease(50~100%)?VoltageDrop(VOLED6~7V?~4V)@white150nit@white150nitOLEDStructureOptimizationLifetime'00'01'02'03'04'05'06'070102030406080FLRedPHRedFLGreenPHGreenFLBluePHBlue

Efficiency

(Cd/A)Year'00'01'02'03'04'05'06'070k10k20k30k60k90k120kFLRedPHRedFLGreenPHGreenFLBlue

Lifetime

(hrs)Year32/56??ColorGenerationMethodsIndividualPatterningWhite+ColorFilterOnecolorEL+CCMStructureMaterialS/M-FMM,LITIPolymer-Ink-jet,LITIC/FEncapsulationCOABlueEL+CCMCompanySDI,Sony,LGD,CMELKodak,SEC,SonyIdemitsuKosanMerit?HighEfficiency?Longlifetime?Highcolorpurity?ProcessYield?Highresolutionpattern?Scalability?ProcessYield?Highresolutionpattern?ScalabilityDemerit?Scalability?Highresolutionpatterning?Highcost?LowefficiencyofWhitematerials?LowreliabilityofWhite?Highcost?lowefficiencyofCCM?ColorpurityBGRBGRBGRC/FC/F+CCMOLEDOLEDOLED33/56??ComparisonofColorPatterningItemsEvaporation(ShadowMask)Ink-JetPrintingLITIMaterialsSmallMolecule(SM)Polymer(LEP)LEP,SM,HybridPositionAccuracy±15?±10?±3.0?Resolution<230ppi~200ppi~400ppiApertureRatio(TopEmission)30~50%40~50%40~60%Remarks?M/P:Gen.2?Develop:Gen.4-Glasshandlinglimitation-Maskalignmentlimitation?Size:>Gen.7?Simpleandeconomicalprocess?Materialdevelopmentissue(Specialink)?Size:>Gen.4?DryPatterning?Multi-stacking?Donorfilmrequired34/56??EmissionStructureBottomemissionTopemissionSturcturePro.SimpleProcessHighapertureratioLongLifetimeCon.LowcolorpurityLowresolutionNeedpreciseprocesscontrolResolution<180ppi>200ppiColorPurity70~80%>100%(UsingMicrocavityeffect)OLEDProcessTransparentAnodeMetalCathodeOpaqueDesiccantReflectiveAnodeTransparentCathodeTransparentDesiccantAnode(ITO)ETLHILEMLHTLCathode(Metal)ReflectiveAnodeETLHILEMLHTLTransparentCathode35/56??EncapsulationConventionalEncapsulationNew-FilingEncap.SubstrateEncapsulationglassormetalcanGetterOLEDSealant>1.5mmthick?Glassdistortion,glassbendingbypressandhighcost?Hydrideencapbyhotrolllamination?Inorganicmultilayerstack–NONON?Barixorganic-inorganicmultilayerSubstratePassivationOLED<0.5mmFillingmaterialEncap.glassSubstratePassivationOLED<1.5mm?Inorganic–organic(Ref.GE)New–ThinFilmEncap.36/56??TechnicalIssuesofAMOLEDLowPowerColorGamutBrightnessImageRobustness(Viewingangle,Temperature,Pressure)OutdoorreadabilitySlim&LightFlexibilityInvestment&YieldScalabilityMaterialcostImagestickingLowCostFormFactorHighImageQualityOperatetime&BrightHighResolutionSolutionMaterial,MicroCavityPeakBrightness,DynamicC/ROpticalDesign,CircuitCircuit,OpticalFilmThinFilmEncapsulationBendable,Flexible…Maskstepreduction,SimpleOxideTFT,SolubleprocessMaterial/Device,CircuitMaterial/Device,GUI,CircuitFMM,LITI,WOLEDPartintegration,MaterialYieldRequirements37/56??FutureAMOLEDsⅤ38/56??NECHeadMountDisplayBendableDisplayFlexibleDisplaySource:Nokia/TonyBlanchet-RuthSource:eMaginSource:PhilipsSource:SonyTransparentDisplayWallDisplay3DDisplayWearableDisplaySource:LunarDesign/FranceTelecomFutureDisplayArt&Construction39/56??HighResolution3DDisplayHighResolution3D?FastResponseofAMOLED?FrameRate:120Hz?2Dresolution=3DResolution?2.4”4View3DAMOLEDHighresolution3-DAMOLEDRightEyeLeftEye?TD(TimeDivision)ParallaxBarrier?4.3”WQVGA3DAMOLEDSamsungSDI(SID2006)40/56??TouchScreenDisplay?CapacitivetypesensorintegratedonencapsulationglassofAMOLED?DevelopingAlgorithm?DevelopingcombinedICs,DDI+TDI2.6”QVGAcapacitivetypeTSDIntegratingTSPonEncapsulationglassofAMOLED.Increasingtransmittanceandreducingthemodulethickness.CostreductionasmergingeachICfunctions,DDIandTDI.AMOLEDTSP41/56??DualDisplayBothEmissionDisplay?UltraslimDualPhone?DualmodeMonitor?SlimNotebookwithsubdisplay?TransparentDisplaySameImage?2.2”QCIFSamsungSDI(2004)Sub+MainSamsungSDI(SID2005)?2”QVGA+SubDifferentImage?2”QVGASamsungSDI(SID2006