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第十四章I/O設(shè)計及封裝(一)
OutlinesBasicstructureofI/OcellsNoiseCancellationESDProtectionSchemeI/OringdesignPackageSelection
OutlinesBasicstructureofI/OcellsNoiseCancellationESDProtectionSchemeI/OringdesignPackageSelectionPerformancewithDie,Package,BoardThreemainkillersofperformancePowersupplynoiseReferenceclocknoiseSignalintegrityThesechallengesarerelevantatthedie,package,boardandsystemlevelThesechallengeshaveexistedatlowerspeedsbutdramaticallyincreaseinhighspeedsI/OCellI/OCell–ConnectCoretoPackageSupplyCellmaxcurrentAnalogcelllowvoltagedropDigitalcellInput:w/wopull-up,pull-down,schmittTriggerOutput:drivingstrength,highspeed,lownoiseBi-directionalinput/outputSpecialCellpower-cutI/Ocell,Cornercell……CategoryofI/OCellBasicStructureofI/OcellsOutputCell:Pre-driverProvideproperlogicoperationforIOcircuitsLevelshift(e.g.1.8vcorevoltage,3.3vIOvoltagefor0.18uprocess)Bigpost-driverIObuffer
ProvidebigdrivingcapabilityProvideESDprotectionabilityESDprotectionInputCell:Inputbufferw/wonoiseimmunity(SchmittTrigger)W/wopullup/downfunctionESDprotectionBasicStructureofI/Ocell–Cont.AnalogInputCell:ESDprotectionwithoutinputresisterPower(VDD/VSS):BigESDprotectioncellfortheI/Oring.Othercells:Fillercell:provideconnectionforthepower/groundringESDprotectionCellDecouplingcellI/OLayoutBondingpadI/OfillercellAsstandardcellHeightPowerlinesESDLatch-up
OutlinesBasicstructureofI/OcellsNoiseCancellation
ESDProtectionSchemeI/ORingPackageSelectionNoiseproblematHighSpeedI/OQ:Cansimplyincreasedriversizetomeethighspeedrequirement?A:No!ProblemswhenoutputsignalathighspeedRingingBounceEMINoisesCausedbySwitchingActivity
onOutput
RingingRinging:OscillationonthesignalsattheswitchingpinsBounceEMI:ElectromagneticInterferenceEMIradiationiscausedbyHigh-frequencycurrentbutnotbyvoltageperturbation.EMI–cont.Itisextremelydangerousforawirelesssystem.TheUltimatenoisesourceisinthechip.ControllingEMIatthechiplevelisbecomingmorecritical.SpecialdesigninI/OcellandI/Oring
NoiseControlI/OcellInputwithnoiseimmunitycircuitOutputwithslewratecontrolcontrollingRinging,BounceandEMI
InputNoiseImmunitySchmittTriggercircuitiscommonlyusedtoincreasenoiseimmunityfor“l(fā)owspeed”inputDrawback:largedelayontheinputsignal.Commonlyusedforslowserialmodules,e.g.I2C,SPIOutputNoiseControlCircuitSlewratecontrolRingingcancellationBouncereductionEMIcontrolRingingCancellationandBounceReductionExamplecircuit:
RingingCancellation–cont.ElectromagneticInterferenceControlEMIradiationiscausedbyHigh-frequencycurrent(I)notbyvoltage(V)perturbation.Buttheslewrateofthesignal,dV/dt,reflectthehigh-frequencycurrent.ControllingSignalParameters,RiseandFalltimes,toreducehighfrequencyharmonicsofsignalsandcontrolsspectrumdensity:BounceReductionDesignbouncedetectandcancellationcircuit
SeetheindicationinRingingCancellationReducethenumberofI/Oswhichsharesonepairofsupplies
MoresuppliesforfastI/Os;lesssuppliesforslowI/Os.Arrangethepinordertoavoidswitchingatthesametime
Example:puttheI/Ocellsforaddresssignalanddatasignalalternativelyastheywillnotswitchingatthesametime.Separatepowerdomains
Separatethepowerdomainaccordingtopadfunctions.Analogbank,fastdigitalbank,slowdigitalbank......AddDecouplingcapacitorsbetweenI/Ocells
adddecouplingcaponunusedemptyspace
OutlinesBasicstructureofI/OcellsNoiseCancellationESDProtectionSchemeI/ORingPackageSelectionElectroStaticDischarge(ESD)ProtectionICwasdamagedduetoElectricalOverstressESDTestStandardStandard:JEDECESDstandardHumanBodyModel(HBM)MachineModel(MM)ChargeDeviceModel(CDM)BasicESDrequirementforproductsHBMMMCDMPerformance2000V200V1000VOK10000V1000V2000VSupperESDProtectionReference:
JAMESE.VINSONANDJUINJ.LIOU,SENIORMEMBER,IEEE,
ElectrostaticDischargeinSemiconductorDevices:AnOverview,
ElectrostaticDischargeinSemiconductorDevices:ProtectionTechniques,IEEE,1998.ESDTestModelHumanBodyModel(HBM)ApplyalargevoltageHBMtest:SchematicandcurrentESDTestModel-contMachineModel(MM)Example:testmachinehandlerApplybigcurrentMMtest:SchematicandcurrentESDTestModel-contChargeDeviceModel(CDM)ChargeaccumulatedinsideofICCDMisthemostdangerouscasetodamagertheICESDTestCasesI/OtopowerpinsESDTestCases–cont.SupplypinsESDTestCases-contIOpin-to-pinESDtestESDProtectionCircuitConcept:
provideESDpaths(short-circuitpath)inordertopreventtheESDcurrentintointernalcircuitESDProtectionSchemeInputprotectionOutputprotectionVDDtoVSSESDProtectionNetworkGlobalESDProtectionGlobalESDprotectionInputESDProtectionCircuitTwocommonlyusedESDprotectioncircuitsOutputESDProtectionCircuitTwocommonlyusedESDprotectioncircuitsESDProtectionNetworkVDDtoVSSESDpathESDvoltageacrossVDDandVSScanbequicklydischargedthroughtheshort-circuitpathofturn-onNMOSEDScellorP/GcellESDProtectionNetwork–cont.ProvideESDprotectionpathbetweendifferentpower/groundlevels
OutlinesBasicstructureofI/OcellsNoiseCancellationESDProtectionSchemeI/OringPackageSelectionI/ORingConnectionMakeconnectiontopowerandgroundlinesMakeaglobalESDprotectDesignconsiderations:DiesizeimpactBoundingabilityESDprotectionNoiseimmunityDieSizePad-limitedvs.core-limitedDieSize–cont.IOCellswithFillersinIn-lineBondingForcore-limitedAbuttedIOCellsinStaggeredBonding
Forpad-limitedBondingCapa
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