ManufacturingProcessofTFTLCDModuleTFT-LCDSTRUCTURE&OPERATINGMECHANISMGlassGlass----④LiquidCrystalControltheamountoflightbytheApplyingVoltageBackLight+ThestructureofTFT-LCDisthatLiquidCrystalisbeingfilledbetweenC/FGlass&TFTGlass.OnePixelconsistsof3sub-Pixels(R,G,B)andaccordingtothenumberofthepixels,Display

Resolution(SVGA,XGA,etc)isdetermined.

TheTFTMatrixconsistsofDataLine(Carryingdisplaydatasignal),GateLine(CarryingsignalforturnOn/OfftheTFT).EachTFT,oneachsub-pixel,controlstheamountofApplyingVoltagebetweenC/Fglasselectrode&TFTglasselectrodefortheLiquidCrystal.TheApplyingVoltagechangestheDirectionofLiquidCrystalwhichchangesdirectionoftheLight.TransmittancerateofthePolarizedLight,polarizedbyPolarizer,iscontrolledbyApplyingVoltage.Asaconclusion,DisplayedLightisnowunder-controlofDisplayDataSignal.②GateOn/OfftheTFT------White(TFTOff)Black(TFTOn)①SourceTransporttheDataSignalPolarizer300?(Approx)CommonElectrodeOnePixelDataLinePixelElectrodeGateLine))C/FGlassTFTGlass③PixelApplyingVoltagetotheLiquidCrystal++++--LiquidCrystalInspecteachTFTLayerafterfinishingeachprocessINSPEC-TIONDEPOS-ITIONCLEANINGPRCOATEXPO-SUREDEVEL-OPETCHPRREMOVEPROCESSCYCLEDepositTHINLAYERontheGlassSputter:MetalLayerPECVD:Semiconductor/InsulatorRemovingthePARTICLEfromtheGlassCoatthePHOTORESISTORontheGlassProjectthelightthroughtheMASKRemovingthechemicallychangedPREtchingtheDepositedLayerwithEtchantWETETCH:MetalLayerDRYETCH:Semiconductor/InsulatorRemovingthePRwithStripperMaskSEMICONDUCTOR/INSULATOR

DATAELECTRODEINSULATORITOELECTRODEGATEELECTRODETFTMANUFACTURINGPROCESSDEPOSITION

LAYERGLASSDEPOSITIONZONERFHSiSiNSiNHSiHHHNNHHHHHAlDCAlAlAlAlAr+AlAr+TARGETSUBSTRATEPECVDSPUTTERDEPOSITIONDeposittheInsulator,Semi-conductor,andMetallayerontotheglassbychemicalorphysicalmethod.*PECVD(PlasmaEnhancedChemicalVapourDeposition)*RF(RadioFrequency)PRINCIPLEDecomposethereactantgasintoplasmastatewithradiofrequency,thendeposittheSiNxlayer&amorphous-Siliconlayerontotheglassbychemicalreactioninavacuumchamber.RAWMATERIALNH3,SiH4,H2,N2,PH3TARGETLAYER

SiNxlayerAmorphous-SiliconlayerPRINCIPLEDepositadesiredmetallayerontothesubstrate(glass)withstrippedoffmetalelementsfrommetaltargetbyactivatedargongas.RAWMATERIALSeveralmetaltargets(Aluminum,Chrominum,Molybdeum,ITO)Argon,O?GasTARGETLAYERAl,Mo,Cr,ITOCLEANINGZONECleaningtheglassbyremovingtheparticlespollutedbyenvironment,equipment,andworkers.PRINCIPLERemovingtheforeignmaterialorparticlewithUVlightorphysicalmethod/materialsuchasDeionizedWater,Brush,orUltrasonicWaves.RAWMATERIALDeionizedWater

APPLYINGPROCESSBefore&afterthealldepositionprocessesDepositedLayerParticleCLEANINGCLEANINGPRINCIPLEPHOTORAWMATERIALMaskDeveloper?ExposeExposethemaskpatternontheglasstochangethestructureofthePR.?DevelopRemovetheunnecessaryPRwithdeveloper.?PhotoresistorCoatingCoatPRontheglasswithSpinCoatingmethod.PhotoResistDEPOSITION

LAYERPRPHOTOZONEPhotolithographicprocesstoformadesiredpatternontheglass.

PhotoresistorCoatingExposeDevelopMaskRemovetheunwantedpartofthemetallayertoobtainthedesiredpattern.PRINCIPLERemovingprocessofmetallayerbyChemicalreactionbetweenmetal&etchant.ETCHANTPhosphoricacid＋Aceticacid＋Nitricacid(Aluminumlayer)C.A.N.＋Nitricacid(Chrominumlayer)Hydrochloricacid＋Nitiricacid(ITOlayer)TARGETLAYERAl,Mo,Cr,ITOlayerPRINCIPLEDecomposethedepositedintoplasmastatewithradiofrequency,thenremovethedepositlayerfromtheglassbychemicalreactioninavacuumchamber.RAWMATERIALSF6,O2,He,HCl,Cl2GasTARGETLAYERSemiconductorlayer:a-Si,n+a-SiSiNxlayer:SiNXETCHZONEPHOTORESISTERDEPOSITION

LAYERETCHWETETCHDRYETCHFOSiSiF4SiPLASMAGasRFSTRIPZONEPhotoresistremovingprocessaftertheetchingprocess.PRINCIPLERemovehardenedphotoresistbychemicalreactionbetweenphotoresist&StripperRAWMATERIALStripperIPA(IsopropylAlcohol)STRIPPHOTORESISTERDEPOSITION

LAYERSTRIPScreeningprocessfortheduringandafterTFTArrayProcess.PRINCIPLEInspectingthechargingcharacteristicswhileregulardisplaysignalisappliedtotheTFTpaneltoscreencharacteristicfailure,linedefect,andpixeldefect.INSPECTIONSTEP

AFTERTFTPROCESSPRINCIPLE

InspecttherepeatingpatternofinnerarraytoscreentheabnormalpatternbyImageinspection.INSPECTIONSTEP

AllProductInspection:PXLLayer[Photo+FinalInspection]Sampling:PQCGateInspection(afterACT,n+,PXL,MPS)TFTPanelCameraImageProcessingRepeatingPattern???????Pattern??TFTSubstrateModulator~SignalMPSINSPECTIONPTNINSPECTIONINSPECTIONZONEImageProcessingFilteringtheabnormalpatternbyImageinspectionFilteringtheabnormalpatternbyImageinspectionCellMANUFACTURINGPROCESS

INPUTTFTModuleFactoryINPUTC/FGAPFORMINGPutTFTglass&C/FglasstogetherINITIALCLEANING

RemovingparticlefromtheglassALIGNMENTPRINTING.PrintingalignmentlayerontheglassRUBBINGRubbingthealignmentlayerwithrubbingroller.SEALPRINTINGPrintingthesealwithSealMaskSCRIBE&BREAKINGCuttingthecombinedglassintoscreenunitsLIQUIDCRYSTALINJECTIONSealthepanelwithsealantafterinjectL/CintothepanelFINALINSPECTIONInspectingtheTFTpanelwhileregulardisplaysignalisapplied

SPACERSCATTERINGSpraythespacertokeepthecellgapIn-linedprocessesfromTFTglass&C/Fglassinputprocesstogapformingprocesstomanufacturedesiredpanel.C/F:ColorFilterPI:PolyimidePiPRINTINGRUBBINGTFTC/FInputTFTglass&C/FGlassintoaninitialcleanertoremoveparticleafterincominginspection.Printingalignmentlayer(Polyimide)withrollerprinterApplyingforcetothePolyimidelayertomakeLiquidCrystalalignmentlayerPrintingsealanttoattachC/Fglass&TFTglassThensprayspacertokeepthegapbetweenC/Fglass&TFTglassPutC/Fglass&TFTglasstogetherwithexactalignmentCleaningMachinePiPrinterRubbingMachineSealantPrinterDispenserAligner

SEALPRINTINGSPACERSPRAYGAPFORMINGCELLPROCESSBreakingthemotherglassintoscreenunitsaftergapformingprocessFD7R001A1G-SAttachingC/Fglass&TFTglasswithheat/pressureandkeepingtheCellGapMarkingthepanelIDNumberontheglasswithLaserMarkerBreakingthecombinedglassintoscreenunitsHotPresserLaserMarkerScriber&BreakerGAPFORMINGLASERMARKINGCELLBREAKINGHotPresser(heating)HotPresser(heating)PRESSURESCRIBE&BREAKInjecttheLiquidCrystalinthevacuumchamberInjecttheL/CintothespacebetweenTFTglass&C/FglassPastethesealantonthepanelthenprojectUVlighttohardenthesealantCleaningthepanelafterEndSealingprocess&performingtheCellAginginspectthepanelvisuallyL/CfillingMachineEndSealingMachinePanelCleaningMachineVisualInspectorL/CINJECTIONENDSEALINGCLEANINGVISUALINSPECTIONL/CINJECTIONInspectingthepanelwhileregulardisplaysignalisappliedtothepaneltomakepanelevaluation.HANDOVERTOMODULEFACTORYRoundingthesharpedgeofthepanelwithgrinderInspectingthepanelwhileregulardisplaysignalisappliedtothepanel,tomakepanelevaluation.RemovingtheparticlesbeforehandoverthepaneltotheModuleFactoryGrinderAutoprobeChipRemoverGRINDERFINALINSPECTIONREMOVINGCHIPCellEdgeBEFOREAFTERINSPECTIONMODULEMANUFACTURINGPROCESS

TABProcessPCBProcessAssemblyProcess?????????CellFactory?Cleaning?PolarizerAssembly?TABBonding?AutoClave?PCBBonding?BackLightAssembly?Visual

Inspection?Burn-in?PackingKnifeChipRemovingtheGlassChipwithRotatingKnifeRemovingtheDust&FingerPrintwithBrushBrushShowerRinsingthePanelwithDIWatershower

NozzleRemovingtheDIwater&MoisturewithAirKnife

SurfaceCleaningChipRemovingChipRemovingRemovingparticles(GlassChip,Dust,&FingerPrint)fromthepanel.PANELCLEANINGAirKnifeAttachingPolarizeronBothSideofthePanelPOLARIZERATTACHINGMACHINEAlignthePanel&Polarizer*ProtectingFilmDisattachment*AttachingthePolarizeronBothsideofthePanelAttachingAlignmentSUCTIONBLOCKRollerFunctionofPolarizerPolarizertransmitthelightontoonlyonedirectiontocontrollighttransmission.

LightSourceInterceptTransmitpolarizerBondingtheTABICswithConstantHeater,SimultaneouslyTABBONDINGMACHINEAlignthePanelexactlyApplytheACFPunchingofftheTABTemporaryBondingafterAlignmentTABMainBonding

PermanentBondingatConstantTemperature&Pressure

Drive-ICisinstalledtoOperatetheTransistorsinthePanelTABTemporaryBondingACFBondingACFTABPANELConductiveBallPanelACFTABFilmHeat/PressureT