第十章離子注入

(IonImplantation)Workerholdingtheworld'sfirst300millimetersiliconwaferpopulatedwithelectroniccomponentsusingthewidebeamionimplantationtechnology.?Usedforatomicandnuclearresearch?Earlyideaintroducedin1950’s?Introducedtosemiconductormanufacturinginmid-1970s.IonImplantation:HistoricalIonImplantation用來(lái)制作MOS晶體管所需的各種n型硅和p型硅?Independentlycontroldopantprofile(ionenergy)anddopantconcentration(ioncurrenttimesandimplantationtime)?Anisotropicdopantprofile?Easytoachievehighconcentrationdopeofheavydopantatomsuchasphosphorusandarsenic.UniqueFeaturesofIonImplantationIonizedE5~200keV1011~1018/cm2IonImplanterSourcematerialforSiprocessing:BF3,AsH3,PH3

SourcematerialforGaAsprocessing:SiH4,H2

彎道可以過(guò)濾掉中性粒子：IonGeneration:IonAcceleration:Analyzer可以將B同位素(B10,B11)區(qū)分開(kāi)IonControlling:?Dopant

:P+,As+,B+,BF2+…..?Ionenergy:controlsjunctiondepth?Dopantdose:controlsdopantconcentration?Beamcurrent:controlimplantedtime?Implantationtime:determinedimplanterproductioncapacityLargecurrent,lessimplantationtime,higheryield.Implantationtime>10s,ensureimplantationuniformityIonImplantationControlApplicationofIonImplantation1、n型p型硅制作；2、溝道的注入：氧化層的隔離用溝道、DRAM電容器的電容溝道SIMOX(氧注入隔離)非晶化和合金化薄膜制備`SIMOX---SeparationofIMplanted

OXygen1、氧注入2、退火單晶SiSIMOXSiO2StoppingMechanismE:forenergyA:foratomicnumberLowenergyIntermediateenergyHighenergy(射程)IonProjectionRangeSiliconsurfacelatticearrangement110111100傾斜旋轉(zhuǎn)硅片后的無(wú)序方向屏蔽氧化層，使離子在進(jìn)入晶體前的速度方向無(wú)序化(有可能將氧注入晶體)離子注入前破壞晶體結(jié)構(gòu)(Si,F,Ar,Ge)(注入損傷)ChangethechargebalanceEnlargetheionbeamWaferChargingChargeNeutralizationSystemCauseincompletedopantjunction,HarmfultoyieldContaminationSources1、Particles:causedbyimproperoperation

－－通過(guò)表面氧化屏蔽層解決2、Hydrocarbons:oilparticlesfromthepumpsimpactsbystrongionbeam3、Heavemetals：ionbeamimpactedthediaphragmwhichmadeofgraphiteorAl4、Crosscontamination：oneIonImplantershouldbeusedforonlyonematerial.